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    2015-5-22 · Reactor Operatioti Using Rogers/Heitz Wires: The use of silicon slim rods is expensive, awkward, and slow. Thus in 1964, a nonsilicon starting-rod process was developed by Leo C. Rogers and Alfred J. Heitz. In place of either intrinsic or doped silicon rods, the

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    The primary goal of the current SBIR is to develop a microstructure, which can be etched onto a variety of dielectric optical materials whose transparency regions span the visible through infrared (e.g. fused silica, zinc sulfide, zinc selenide, silicon, germanium, etc.), that will be capable of reflecting greater than 99.5% of 1030 to 1070 nm ...

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    2021-5-21 · Silicon photonics has appeared in the recent years as the best suited technology for fulfilling the demands of future optical interconnects. In this framework, modulators are key elements in the performance of an optical link. In order to achieve modulation in silicon the Free-Carrier Plasma Dispersion (FCPD) effect is normally used.

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    2015-5-22 · Reactor Operatioti Using Rogers/Heitz Wires: The use of silicon slim rods is expensive, awkward, and slow. Thus in 1964, a nonsilicon starting-rod process was developed by Leo C. Rogers and Alfred J. Heitz. In place of either intrinsic or doped silicon rods, the Rogers/Heitz method uses wires on which to grow silicon.

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    2021-1-16 · Silicon nitride is stable in oxidizing atmospheres, making it useful as a mask for diffusion and for silicon oxida-tion (see the 'LOCOS' process, discussed in Section 2.3.1). Like oxide films, thin-film stoichiometric silicon nitride, Si3N 4, is amorphous and has a high resistivity (>1013 W-m) and low thermal conductivity.

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